Use of a diode laser to observe room-temperature, low-power optical bistability in a GaAs-AlGaAs etalon

S. S. Tarng, H. M. Gibbs, J. L. Jewell, N. Peyghambarian, A. C. Gossard, T. Venkatesan, W. Wiegmann

Research output: Contribution to journalArticle

21 Scopus citations

Abstract

Optical bistability is observed using a single-mode diode laser in a GaAs-AlGaAs multiple-quantum-well etalon with as low as six mW power at 830 nm.

Original languageEnglish (US)
Pages (from-to)360-361
Number of pages2
JournalApplied Physics Letters
Volume44
Issue number4
DOIs
StatePublished - Dec 1 1984

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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    Tarng, S. S., Gibbs, H. M., Jewell, J. L., Peyghambarian, N., Gossard, A. C., Venkatesan, T., & Wiegmann, W. (1984). Use of a diode laser to observe room-temperature, low-power optical bistability in a GaAs-AlGaAs etalon. Applied Physics Letters, 44(4), 360-361. https://doi.org/10.1063/1.94775