USE OF A DIODE LASER TO OBSERVE ROOM-TEMPERATURE, LOW-POWER OPTICAL BISTABILITY IN A GaAs-AlGaAs ETALON.

S. S. Tarng, H. M. Gibbs, J. L. Jewell, Nasser N Peyghambarian, A. C. Gossard, T. Venkatesan, W. Wiegmann

Research output: Contribution to journalArticle

21 Citations (Scopus)

Abstract

Optical bistability is observed using a single-mode diode laser in a GaAs-AlGaAs multiple-quantum-well etalon with as low as six mw power at 830 nm.

Original languageEnglish (US)
Pages (from-to)360-361
Number of pages2
JournalApplied Physics Letters
Volume44
Issue number4
DOIs
StatePublished - Jan 1 1984

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optical bistability
aluminum gallium arsenides
semiconductor lasers
quantum wells
room temperature

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

USE OF A DIODE LASER TO OBSERVE ROOM-TEMPERATURE, LOW-POWER OPTICAL BISTABILITY IN A GaAs-AlGaAs ETALON. / Tarng, S. S.; Gibbs, H. M.; Jewell, J. L.; Peyghambarian, Nasser N; Gossard, A. C.; Venkatesan, T.; Wiegmann, W.

In: Applied Physics Letters, Vol. 44, No. 4, 01.01.1984, p. 360-361.

Research output: Contribution to journalArticle

Tarng, S. S. ; Gibbs, H. M. ; Jewell, J. L. ; Peyghambarian, Nasser N ; Gossard, A. C. ; Venkatesan, T. ; Wiegmann, W. / USE OF A DIODE LASER TO OBSERVE ROOM-TEMPERATURE, LOW-POWER OPTICAL BISTABILITY IN A GaAs-AlGaAs ETALON. In: Applied Physics Letters. 1984 ; Vol. 44, No. 4. pp. 360-361.
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