Valence and conduction band structure of the quasi-two-dimensional semiconductor Sn S2

David A. Racke, Mahesh R. Neupane, Oliver L A Monti Masel

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

We present the momentum-resolved photoemission spectroscopy of both the valence and the conduction band region in the quasi-two-dimensional van der Waals-layered indirect band gap semiconductor SnS2. Using a combination of angle-resolved ultraviolet photoemission and angle-resolved two-photon photoemission (AR-2PPE) spectroscopy, we characterize the band structure of bulk SnS2. Comparison with density functional theory calculations shows excellent quantitative agreement in the valence band region and reveals several localized bands that likely originate from defects such as sulfur vacancies. Evidence for a moderate density of defects is also observed by AR-2PPE in the conduction band region, leading to localized bands not present in the computational results. The energetic structure and dispersion of the conduction bands is captured well by the computational treatment, with some quantitative discrepancies remaining. Our results provide a broader understanding of the electronic structure of SnS2 in particular and van der Waals-layered semiconductors in general.

Original languageEnglish (US)
Article number085309
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume93
Issue number8
DOIs
StatePublished - Feb 17 2016

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Valence bands
Conduction bands
Band structure
conduction bands
Photoemission
Semiconductor materials
valence
photoelectric emission
Defects
Photoelectron spectroscopy
Sulfur
Vacancies
Electronic structure
Density functional theory
Momentum
Energy gap
Photons
Spectroscopy
defects
spectroscopy

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electronic, Optical and Magnetic Materials

Cite this

Valence and conduction band structure of the quasi-two-dimensional semiconductor Sn S2. / Racke, David A.; Neupane, Mahesh R.; Monti Masel, Oliver L A.

In: Physical Review B - Condensed Matter and Materials Physics, Vol. 93, No. 8, 085309, 17.02.2016.

Research output: Contribution to journalArticle

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