Van der Waals epitaxy of the layered semiconductors SnSe2 and SnS2: Morphology and growth modes

R. Schlaf, Neal R Armstrong, B. A. Parkinson, C. Pettenkofer, W. Jaegermann

Research output: Contribution to journalArticle

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Abstract

The recent development of so-called van der Waals epitaxy offers a whole new variety of material combinations for semiconductor heterojunctions. In this paper we investigate the morphology and the growth modes of the layered semiconductors SnSe2 (Eg = 1.03 eV) and SnS2 (Eg = 2.18 eV) on a variety of layered single crystalline substrate materials (highly oriented pyrolytic graphite, MoTe2, MoS2, WSe2, GaSe, SnS2 and SnSe2). The growth modes were investigated by low energy electron diffraction, photoemission spectroscopy and scanning tunnelling microscopy. We found that both of the materials grow in a two-dimensional layer-by-layer fashion with three-dimensional nucleation. However, despite the strong similarities of both of the materials the results indicate that SnS2 grows in a more ideal layer-by-layer mode than SnSe2. This is attributed to different surface diffusion rates due to different growth temperatures. The difference in empirically determined optimized growth temperatures are explained by the different thermal stabilities of the materials.

Original languageEnglish (US)
Pages (from-to)1-14
Number of pages14
JournalSurface Science
Volume385
Issue number1
StatePublished - Aug 1 1997

Fingerprint

Epitaxial growth
epitaxy
Growth temperature
pyrolytic graphite
surface diffusion
Graphite
Surface diffusion
Low energy electron diffraction
scanning tunneling microscopy
heterojunctions
Scanning tunneling microscopy
Photoelectron spectroscopy
thermal stability
photoelectric emission
electron diffraction
nucleation
Heterojunctions
Thermodynamic stability
Nucleation
temperature

Keywords

  • Growth modes
  • Layered chalcogenides
  • Low energy electron diffraction
  • Molecular beam epitaxy
  • Photoelectron spectroscopy
  • Scanning tunnelling microscopy

ASJC Scopus subject areas

  • Physical and Theoretical Chemistry
  • Condensed Matter Physics
  • Surfaces and Interfaces

Cite this

Schlaf, R., Armstrong, N. R., Parkinson, B. A., Pettenkofer, C., & Jaegermann, W. (1997). Van der Waals epitaxy of the layered semiconductors SnSe2 and SnS2: Morphology and growth modes. Surface Science, 385(1), 1-14.

Van der Waals epitaxy of the layered semiconductors SnSe2 and SnS2 : Morphology and growth modes. / Schlaf, R.; Armstrong, Neal R; Parkinson, B. A.; Pettenkofer, C.; Jaegermann, W.

In: Surface Science, Vol. 385, No. 1, 01.08.1997, p. 1-14.

Research output: Contribution to journalArticle

Schlaf, R, Armstrong, NR, Parkinson, BA, Pettenkofer, C & Jaegermann, W 1997, 'Van der Waals epitaxy of the layered semiconductors SnSe2 and SnS2: Morphology and growth modes', Surface Science, vol. 385, no. 1, pp. 1-14.
Schlaf, R. ; Armstrong, Neal R ; Parkinson, B. A. ; Pettenkofer, C. ; Jaegermann, W. / Van der Waals epitaxy of the layered semiconductors SnSe2 and SnS2 : Morphology and growth modes. In: Surface Science. 1997 ; Vol. 385, No. 1. pp. 1-14.
@article{0a1dddb587164cf594b52027a1ebcb2d,
title = "Van der Waals epitaxy of the layered semiconductors SnSe2 and SnS2: Morphology and growth modes",
abstract = "The recent development of so-called van der Waals epitaxy offers a whole new variety of material combinations for semiconductor heterojunctions. In this paper we investigate the morphology and the growth modes of the layered semiconductors SnSe2 (Eg = 1.03 eV) and SnS2 (Eg = 2.18 eV) on a variety of layered single crystalline substrate materials (highly oriented pyrolytic graphite, MoTe2, MoS2, WSe2, GaSe, SnS2 and SnSe2). The growth modes were investigated by low energy electron diffraction, photoemission spectroscopy and scanning tunnelling microscopy. We found that both of the materials grow in a two-dimensional layer-by-layer fashion with three-dimensional nucleation. However, despite the strong similarities of both of the materials the results indicate that SnS2 grows in a more ideal layer-by-layer mode than SnSe2. This is attributed to different surface diffusion rates due to different growth temperatures. The difference in empirically determined optimized growth temperatures are explained by the different thermal stabilities of the materials.",
keywords = "Growth modes, Layered chalcogenides, Low energy electron diffraction, Molecular beam epitaxy, Photoelectron spectroscopy, Scanning tunnelling microscopy",
author = "R. Schlaf and Armstrong, {Neal R} and Parkinson, {B. A.} and C. Pettenkofer and W. Jaegermann",
year = "1997",
month = "8",
day = "1",
language = "English (US)",
volume = "385",
pages = "1--14",
journal = "Surface Science",
issn = "0039-6028",
publisher = "Elsevier",
number = "1",

}

TY - JOUR

T1 - Van der Waals epitaxy of the layered semiconductors SnSe2 and SnS2

T2 - Morphology and growth modes

AU - Schlaf, R.

AU - Armstrong, Neal R

AU - Parkinson, B. A.

AU - Pettenkofer, C.

AU - Jaegermann, W.

PY - 1997/8/1

Y1 - 1997/8/1

N2 - The recent development of so-called van der Waals epitaxy offers a whole new variety of material combinations for semiconductor heterojunctions. In this paper we investigate the morphology and the growth modes of the layered semiconductors SnSe2 (Eg = 1.03 eV) and SnS2 (Eg = 2.18 eV) on a variety of layered single crystalline substrate materials (highly oriented pyrolytic graphite, MoTe2, MoS2, WSe2, GaSe, SnS2 and SnSe2). The growth modes were investigated by low energy electron diffraction, photoemission spectroscopy and scanning tunnelling microscopy. We found that both of the materials grow in a two-dimensional layer-by-layer fashion with three-dimensional nucleation. However, despite the strong similarities of both of the materials the results indicate that SnS2 grows in a more ideal layer-by-layer mode than SnSe2. This is attributed to different surface diffusion rates due to different growth temperatures. The difference in empirically determined optimized growth temperatures are explained by the different thermal stabilities of the materials.

AB - The recent development of so-called van der Waals epitaxy offers a whole new variety of material combinations for semiconductor heterojunctions. In this paper we investigate the morphology and the growth modes of the layered semiconductors SnSe2 (Eg = 1.03 eV) and SnS2 (Eg = 2.18 eV) on a variety of layered single crystalline substrate materials (highly oriented pyrolytic graphite, MoTe2, MoS2, WSe2, GaSe, SnS2 and SnSe2). The growth modes were investigated by low energy electron diffraction, photoemission spectroscopy and scanning tunnelling microscopy. We found that both of the materials grow in a two-dimensional layer-by-layer fashion with three-dimensional nucleation. However, despite the strong similarities of both of the materials the results indicate that SnS2 grows in a more ideal layer-by-layer mode than SnSe2. This is attributed to different surface diffusion rates due to different growth temperatures. The difference in empirically determined optimized growth temperatures are explained by the different thermal stabilities of the materials.

KW - Growth modes

KW - Layered chalcogenides

KW - Low energy electron diffraction

KW - Molecular beam epitaxy

KW - Photoelectron spectroscopy

KW - Scanning tunnelling microscopy

UR - http://www.scopus.com/inward/record.url?scp=0031212074&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0031212074&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:0031212074

VL - 385

SP - 1

EP - 14

JO - Surface Science

JF - Surface Science

SN - 0039-6028

IS - 1

ER -