VECSEL design for high peak power ultrashort mode-locked operation

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Abstract

The generation of mode-locked pulses in vertical external-cavity surface-emitting lasers with a semiconductor saturable absorber mirror is studied by numerically solving the Maxwell semiconductor Bloch equations describing the propagating light field coupled to the electron-hole-pair excitations in the quantum wells. High peak-power sub-100 fs mode-locked pulses are realized through optimizing the gain chip design. The unequal spacing of up to four quantum wells in a given field antinode leads to a broad linear gain profile and reduced intracavity dispersion. The proposed designs are found to be robust with regard to uncontrollable growth uncertainties.

Original languageEnglish (US)
Article number262105
JournalApplied Physics Letters
Volume112
Issue number26
DOIs
StatePublished - Jun 25 2018

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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