VECSEL threshold and output power-shutoff dependence on the carrier recombination rates

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Abstract

We compute the lasing threshold and thermally driven power-shutoff characteristics of optically pumped vertical-external-cavity surface-emitting lasers. Using a quantitative numerical model, variations in the threshold and shutoff power levels are contrasted for the two approaches to the computation of the carrier recombination rates: using the AN + BN2 + CN3 model with the temperature and carrier density independent coefficients, versus using recombination rates precomputed within the framework of the microscopic many-body theory.

Original languageEnglish (US)
Pages (from-to)2511-2513
Number of pages3
JournalIEEE Photonics Technology Letters
Volume17
Issue number12
DOIs
Publication statusPublished - Dec 2005

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Keywords

  • Auger recombination
  • Optically pumped laser
  • Semiconductor microcavity
  • Vertical-external-cavity surface-emitting laser (VECSEL)

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Atomic and Molecular Physics, and Optics
  • Physics and Astronomy (miscellaneous)

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