VECSEL threshold and output power-shutoff dependence on the carrier recombination rates

Research output: Contribution to journalArticle

21 Citations (Scopus)

Abstract

We compute the lasing threshold and thermally driven power-shutoff characteristics of optically pumped vertical-external-cavity surface-emitting lasers. Using a quantitative numerical model, variations in the threshold and shutoff power levels are contrasted for the two approaches to the computation of the carrier recombination rates: using the AN + BN2 + CN3 model with the temperature and carrier density independent coefficients, versus using recombination rates precomputed within the framework of the microscopic many-body theory.

Original languageEnglish (US)
Pages (from-to)2511-2513
Number of pages3
JournalIEEE Photonics Technology Letters
Volume17
Issue number12
DOIs
StatePublished - Dec 2005

Fingerprint

Surface emitting lasers
Carrier concentration
Numerical models
thresholds
output
surface emitting lasers
lasing
Temperature
cavities
coefficients
temperature

Keywords

  • Auger recombination
  • Optically pumped laser
  • Semiconductor microcavity
  • Vertical-external-cavity surface-emitting laser (VECSEL)

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Atomic and Molecular Physics, and Optics
  • Physics and Astronomy (miscellaneous)

Cite this

VECSEL threshold and output power-shutoff dependence on the carrier recombination rates. / Zakharian, Armis R.; Hader, Jorg; Moloney, Jerome V; Koch, Stephan W.

In: IEEE Photonics Technology Letters, Vol. 17, No. 12, 12.2005, p. 2511-2513.

Research output: Contribution to journalArticle

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