Very high sidemode-suppression-ratio distributed-bragg-reflector lasers grown by chemical beam epitaxy

F. S. Choa, W. T. Tsang, R. A. Logan, R. P. Gnall, U. Keren, T. L. Koch, C. A. Burrus, M. C. Wu, Y. K. Chen, P. F. Sciortino, A. M. Sergent, P. J. Corvini

Research output: Contribution to journalArticle

3 Scopus citations

Abstract

The fabrication and performance of InGaAs/InGaAsP multiquantum well distributed-Bragg-reflector lasers grown by chemical beam epitaxy are reported. Use of a long and weak grating, which was made on a thin and uniformly grown quaternary layer, has enabled the grating coupling constant κ to be well controlled. For most of the lasers the measured linewidths are below 10 MHz. A record high sidemode suppression ratio of 58·5 dB was obtained.

Original languageEnglish (US)
Pages (from-to)1001-1002
Number of pages2
JournalElectronics Letters
Volume28
Issue number11
DOIs
StatePublished - May 21 1992

Keywords

  • Lasers
  • Semiconductor lasers

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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    Choa, F. S., Tsang, W. T., Logan, R. A., Gnall, R. P., Keren, U., Koch, T. L., Burrus, C. A., Wu, M. C., Chen, Y. K., Sciortino, P. F., Sergent, A. M., & Corvini, P. J. (1992). Very high sidemode-suppression-ratio distributed-bragg-reflector lasers grown by chemical beam epitaxy. Electronics Letters, 28(11), 1001-1002. https://doi.org/10.1049/el:19920636