The fabrication and performance of InGaAs/InGaAsP multiquantum well distributed-Bragg-reflector lasers grown by chemical beam epitaxy are reported. Use of a long and weak grating which was made on a thin and uniformly grown quaternary layer, has enabled the grating coupling constant k to be well controlled. For most of the lasers the measured linewidths are below 10 MHz. A record high sidemode suppression ratio of 58.5 dB was obtained.
|Original language||English (US)|
|Number of pages||2|
|Publication status||Published - Jan 1 1992|
ASJC Scopus subject areas
- Electrical and Electronic Engineering