Very high sidemode-suppression-ratio distributed-Bragg-reflector lasers grown by chemical beam epitaxy

F. S. Choa, W. T. Tsang, R. A. Logan, R. P. Gnall, U. Koren, Thomas L Koch, C. A. Burrus, M. C. Wu, Y. K. Chen, P. F. Sciortino, A. M. Sergent, P. J. Corvini

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Abstract

The fabrication and performance of InGaAs/InGaAsP multiquantum well distributed-Bragg-reflector lasers grown by chemical beam epitaxy are reported. Use of a long and weak grating which was made on a thin and uniformly grown quaternary layer, has enabled the grating coupling constant k to be well controlled. For most of the lasers the measured linewidths are below 10 MHz. A record high sidemode suppression ratio of 58.5 dB was obtained.

Original languageEnglish (US)
Pages (from-to)1001-1002
Number of pages2
JournalElectronics Letters
Volume28
Issue number11
Publication statusPublished - Jan 1 1992
Externally publishedYes

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ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Choa, F. S., Tsang, W. T., Logan, R. A., Gnall, R. P., Koren, U., Koch, T. L., ... Corvini, P. J. (1992). Very high sidemode-suppression-ratio distributed-Bragg-reflector lasers grown by chemical beam epitaxy. Electronics Letters, 28(11), 1001-1002.