The fabrication and performance of InGaAs/InGaAsP multiquantum well distributed-Bragg-reflector lasers grown by chemical beam epitaxy are reported. Use of a long and weak grating, which was made on a thin and uniformly grown quaternary layer, has enabled the grating coupling constant κ to be well controlled. For most of the lasers the measured linewidths are below 10 MHz. A record high sidemode suppression ratio of 58·5 dB was obtained.
- Semiconductor lasers
ASJC Scopus subject areas
- Electrical and Electronic Engineering