Water removal and repair of porous ultra low-k films using supercritical CO 2

Research output: Contribution to conferencePaper

7 Scopus citations

Abstract

Fourier transform infrared (FTIR) spectroscopy was used to investigate the effect of adding cosolvents (aliphatic C1 to C6 alcohols) and Si-bearing precursors hexamethyldisilazane (HMDS) and trimethylchlorosilane (TMCS) to supercritical carbon dioxide (scCO 2) to dry and repair ashed blanket porous ultra low-k (ULK) methyl silsesquioxane (MSQ) films (JSR LKD5109) (k = 2.4). The drying results showed that all of the aliphatic C1-C6 alcohols removed hydrogen-bonded water. The film repair results indicated that HMDS and TMCS reacted with both lone (SiO-H) and H-bonded silanol (SiO-H) groups. The hydrophobicity of the starting surface before ashing was recovered after HMDS and TMCS treatments as confirmed by contact angle measurements (≥84°). Electrical performance was also restored based on dielectric constant values of 2.4 ± 0.1. HMDS and TMCS treatments are an effective approach to restore the degradation of ULK MSQ films due to plasma ashing.

Original languageEnglish (US)
Pages279-288
Number of pages10
StatePublished - Dec 1 2003
EventCleaning Technology in Semiconductor Device Manufacturing VIII - Proceedings of the International Symposium - Orlando, FL., United States
Duration: Oct 12 2003Oct 17 2003

Other

OtherCleaning Technology in Semiconductor Device Manufacturing VIII - Proceedings of the International Symposium
CountryUnited States
CityOrlando, FL.
Period10/12/0310/17/03

ASJC Scopus subject areas

  • Engineering(all)

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    Xie, B., & Muscat, A. J. (2003). Water removal and repair of porous ultra low-k films using supercritical CO 2 . 279-288. Paper presented at Cleaning Technology in Semiconductor Device Manufacturing VIII - Proceedings of the International Symposium, Orlando, FL., United States.