Water removal and repair of porous ultra low-k films using supercritical CO 2

Research output: Chapter in Book/Report/Conference proceedingConference contribution

7 Citations (Scopus)

Abstract

Fourier transform infrared (FTIR) spectroscopy was used to investigate the effect of adding cosolvents (aliphatic C1 to C6 alcohols) and Si-bearing precursors hexamethyldisilazane (HMDS) and trimethylchlorosilane (TMCS) to supercritical carbon dioxide (scCO 2) to dry and repair ashed blanket porous ultra low-k (ULK) methyl silsesquioxane (MSQ) films (JSR LKD5109) (k = 2.4). The drying results showed that all of the aliphatic C1-C6 alcohols removed hydrogen-bonded water. The film repair results indicated that HMDS and TMCS reacted with both lone (SiO-H) and H-bonded silanol (SiO-H) groups. The hydrophobicity of the starting surface before ashing was recovered after HMDS and TMCS treatments as confirmed by contact angle measurements (≥84°). Electrical performance was also restored based on dielectric constant values of 2.4 ± 0.1. HMDS and TMCS treatments are an effective approach to restore the degradation of ULK MSQ films due to plasma ashing.

Original languageEnglish (US)
Title of host publicationProceedings - Electrochemical Society
EditorsJ. Ruzyllo, T. Hattori, R.L. Opila, R.E. Novak
Pages279-288
Number of pages10
Volume26
StatePublished - 2003
EventCleaning Technology in Semiconductor Device Manufacturing VIII - Proceedings of the International Symposium - Orlando, FL., United States
Duration: Oct 12 2003Oct 17 2003

Other

OtherCleaning Technology in Semiconductor Device Manufacturing VIII - Proceedings of the International Symposium
CountryUnited States
CityOrlando, FL.
Period10/12/0310/17/03

Fingerprint

Repair
Alcohols
Bearings (structural)
Water
Hydrophobicity
Angle measurement
Contact angle
Fourier transform infrared spectroscopy
Carbon dioxide
Drying
Permittivity
Plasmas
Degradation
Hydrogen

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Xie, B., & Muscat, A. J. (2003). Water removal and repair of porous ultra low-k films using supercritical CO 2 In J. Ruzyllo, T. Hattori, R. L. Opila, & R. E. Novak (Eds.), Proceedings - Electrochemical Society (Vol. 26, pp. 279-288)

Water removal and repair of porous ultra low-k films using supercritical CO 2 . / Xie, Bo; Muscat, Anthony J.

Proceedings - Electrochemical Society. ed. / J. Ruzyllo; T. Hattori; R.L. Opila; R.E. Novak. Vol. 26 2003. p. 279-288.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Xie, B & Muscat, AJ 2003, Water removal and repair of porous ultra low-k films using supercritical CO 2 in J Ruzyllo, T Hattori, RL Opila & RE Novak (eds), Proceedings - Electrochemical Society. vol. 26, pp. 279-288, Cleaning Technology in Semiconductor Device Manufacturing VIII - Proceedings of the International Symposium, Orlando, FL., United States, 10/12/03.
Xie B, Muscat AJ. Water removal and repair of porous ultra low-k films using supercritical CO 2 In Ruzyllo J, Hattori T, Opila RL, Novak RE, editors, Proceedings - Electrochemical Society. Vol. 26. 2003. p. 279-288
Xie, Bo ; Muscat, Anthony J. / Water removal and repair of porous ultra low-k films using supercritical CO 2 Proceedings - Electrochemical Society. editor / J. Ruzyllo ; T. Hattori ; R.L. Opila ; R.E. Novak. Vol. 26 2003. pp. 279-288
@inproceedings{13048b4c7c854a5ca581a62bd4922eea,
title = "Water removal and repair of porous ultra low-k films using supercritical CO 2",
abstract = "Fourier transform infrared (FTIR) spectroscopy was used to investigate the effect of adding cosolvents (aliphatic C1 to C6 alcohols) and Si-bearing precursors hexamethyldisilazane (HMDS) and trimethylchlorosilane (TMCS) to supercritical carbon dioxide (scCO 2) to dry and repair ashed blanket porous ultra low-k (ULK) methyl silsesquioxane (MSQ) films (JSR LKD5109) (k = 2.4). The drying results showed that all of the aliphatic C1-C6 alcohols removed hydrogen-bonded water. The film repair results indicated that HMDS and TMCS reacted with both lone (SiO-H) and H-bonded silanol (SiO-H) groups. The hydrophobicity of the starting surface before ashing was recovered after HMDS and TMCS treatments as confirmed by contact angle measurements (≥84°). Electrical performance was also restored based on dielectric constant values of 2.4 ± 0.1. HMDS and TMCS treatments are an effective approach to restore the degradation of ULK MSQ films due to plasma ashing.",
author = "Bo Xie and Muscat, {Anthony J}",
year = "2003",
language = "English (US)",
volume = "26",
pages = "279--288",
editor = "J. Ruzyllo and T. Hattori and R.L. Opila and R.E. Novak",
booktitle = "Proceedings - Electrochemical Society",

}

TY - GEN

T1 - Water removal and repair of porous ultra low-k films using supercritical CO 2

AU - Xie, Bo

AU - Muscat, Anthony J

PY - 2003

Y1 - 2003

N2 - Fourier transform infrared (FTIR) spectroscopy was used to investigate the effect of adding cosolvents (aliphatic C1 to C6 alcohols) and Si-bearing precursors hexamethyldisilazane (HMDS) and trimethylchlorosilane (TMCS) to supercritical carbon dioxide (scCO 2) to dry and repair ashed blanket porous ultra low-k (ULK) methyl silsesquioxane (MSQ) films (JSR LKD5109) (k = 2.4). The drying results showed that all of the aliphatic C1-C6 alcohols removed hydrogen-bonded water. The film repair results indicated that HMDS and TMCS reacted with both lone (SiO-H) and H-bonded silanol (SiO-H) groups. The hydrophobicity of the starting surface before ashing was recovered after HMDS and TMCS treatments as confirmed by contact angle measurements (≥84°). Electrical performance was also restored based on dielectric constant values of 2.4 ± 0.1. HMDS and TMCS treatments are an effective approach to restore the degradation of ULK MSQ films due to plasma ashing.

AB - Fourier transform infrared (FTIR) spectroscopy was used to investigate the effect of adding cosolvents (aliphatic C1 to C6 alcohols) and Si-bearing precursors hexamethyldisilazane (HMDS) and trimethylchlorosilane (TMCS) to supercritical carbon dioxide (scCO 2) to dry and repair ashed blanket porous ultra low-k (ULK) methyl silsesquioxane (MSQ) films (JSR LKD5109) (k = 2.4). The drying results showed that all of the aliphatic C1-C6 alcohols removed hydrogen-bonded water. The film repair results indicated that HMDS and TMCS reacted with both lone (SiO-H) and H-bonded silanol (SiO-H) groups. The hydrophobicity of the starting surface before ashing was recovered after HMDS and TMCS treatments as confirmed by contact angle measurements (≥84°). Electrical performance was also restored based on dielectric constant values of 2.4 ± 0.1. HMDS and TMCS treatments are an effective approach to restore the degradation of ULK MSQ films due to plasma ashing.

UR - http://www.scopus.com/inward/record.url?scp=3042703031&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=3042703031&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:3042703031

VL - 26

SP - 279

EP - 288

BT - Proceedings - Electrochemical Society

A2 - Ruzyllo, J.

A2 - Hattori, T.

A2 - Opila, R.L.

A2 - Novak, R.E.

ER -