A multiple exposure photolithographic technique is presented. The resolution of the technique is limited not by exposure wavelength but by processing. This optical lithography was implemented by multiple exposures with two etchings and with single etching. The resulting positive resists started with a bare wafer with a 1000 A oxide atop. The wafer was coated with resist and was exposed to the first mask. Plasma etching was applied twice until the final pattern was achieved.
|Original language||English (US)|
|Number of pages||4|
|Journal||Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures|
|State||Published - Jan 1 2000|
ASJC Scopus subject areas
- Condensed Matter Physics
- Electrical and Electronic Engineering