WAVELENGTH UNIFORMITY OF 1. 3 mu m Ga>iN%AsP/ InP DISTRIBUTED BRAGG REFELECTOR LASERS WITH HYBRID BEAM/ VAPOUR EXPITAXIAL GROWTH.

Thomas L Koch, P. J. Corvini, U. Koren

Research output: Contribution to journalArticle

13 Citations (Scopus)

Abstract

We report 1. 3 mu m distributed Bragg reflector (DBR) lasers with a hybrid growth employing base wafers grown by chemical beam epitaxy (CBE), and Fe-doped InP lateral current blocking grown by metal-organic chemical vapour deposition (MOCVD). These lasers display exceptional wavelength uniformity ( sigma 2. 7 Angstrom) across the wafer, and suggest that DBR lasers and vapour/beam growth techniques may be suitable for advanced WDM applications.

Original languageEnglish (US)
Pages (from-to)822-824
Number of pages3
JournalElectronics Letters
Volume24
Issue number13
StatePublished - Jan 1 1988
Externally publishedYes

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DBR lasers
Vapors
Chemical beam epitaxy
Lasers
Organic chemicals
Wavelength division multiplexing
Chemical vapor deposition
Wavelength
Metals

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

WAVELENGTH UNIFORMITY OF 1. 3 mu m Ga>iN%AsP/ InP DISTRIBUTED BRAGG REFELECTOR LASERS WITH HYBRID BEAM/ VAPOUR EXPITAXIAL GROWTH. / Koch, Thomas L; Corvini, P. J.; Koren, U.

In: Electronics Letters, Vol. 24, No. 13, 01.01.1988, p. 822-824.

Research output: Contribution to journalArticle

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abstract = "We report 1. 3 mu m distributed Bragg reflector (DBR) lasers with a hybrid growth employing base wafers grown by chemical beam epitaxy (CBE), and Fe-doped InP lateral current blocking grown by metal-organic chemical vapour deposition (MOCVD). These lasers display exceptional wavelength uniformity ( sigma 2. 7 Angstrom) across the wafer, and suggest that DBR lasers and vapour/beam growth techniques may be suitable for advanced WDM applications.",
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