Wavelength Uniformity of 13 alnAsP/lnP Distributed Bragg Reflector Lasers with Hybrid Beam/Vapour Epitaxial Growth

T. L. Koch, P. J. Corvini, U. Koren, W. T. Tsang

Research output: Contribution to journalArticle

13 Scopus citations

Abstract

We report 1.3 μm distributed Bragg reflector (DBR) lasers with a hybrid growth employing base wafers grown by chemical beam epitaxy (CBE), and Fe-doped InP lateral current blocking grown by metal-organic chemical vapour deposition (MOCVD). These lasers display exceptional wavelength uniformity (a ~ 2.7 Å) across the wafer, and suggest that DBR lasers and vapour/beam growth techniques may be suitable for advanced WDM applications.

Original languageEnglish (US)
Pages (from-to)822-824
Number of pages3
JournalElectronics Letters
Volume24
Issue number13
DOIs
StatePublished - Jan 1 1988
Externally publishedYes

Keywords

  • Epitaxy
  • Semiconductor lasers

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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