Wet and dry HF-last cleaning process for high-integrity gate oxides

C. Werkhoven, E. Granneman, M. Hendriks, R. De Blank, S. Verhaverbeke, P. Mertens, M. Meuris, W. Vandervorst, M. Heijns, A. Philipossian

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Scopus citations

Abstract

The suitability of using either a wet HF process or an integrated HF vapor process prior to clustered gate stack formation is compared. When ultra pure chemicals are used for wet chemical pre-cleaning, a systematic improvement of gate oxide integrity is noticeable in case of the integrated HF vapor etching technique. This is attributed to a more effective removal of the low quality wet chemical cleaning oxide and the more controllable initiation of the oxidation process.

Original languageEnglish (US)
Title of host publication1992 International Technical Digest on Electron Devices Meeting, IEDM 1992
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages633-636
Number of pages4
ISBN (Electronic)0780308174
DOIs
StatePublished - Jan 1 1992
Externally publishedYes
Event1992 International Technical Digest on Electron Devices Meeting, IEDM 1992 - San Francisco, United States
Duration: Dec 13 1992Dec 16 1992

Publication series

NameTechnical Digest - International Electron Devices Meeting, IEDM
Volume1992-December
ISSN (Print)0163-1918

Conference

Conference1992 International Technical Digest on Electron Devices Meeting, IEDM 1992
CountryUnited States
CitySan Francisco
Period12/13/9212/16/92

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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    Werkhoven, C., Granneman, E., Hendriks, M., De Blank, R., Verhaverbeke, S., Mertens, P., Meuris, M., Vandervorst, W., Heijns, M., & Philipossian, A. (1992). Wet and dry HF-last cleaning process for high-integrity gate oxides. In 1992 International Technical Digest on Electron Devices Meeting, IEDM 1992 (pp. 633-636). [307440] (Technical Digest - International Electron Devices Meeting, IEDM; Vol. 1992-December). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IEDM.1992.307440