Wet cleaning of cross-contamination of high-k dielectrics in plasma etch tool

Viraj Pandit, H. G. Parks, Bert Vermeire, Srini Raghavan

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

Direct tunneling through the gate SiO2 (εr ≈4) has become a serious concern for metal-oxide semiconductor field effect transistor scaling. The semiconductor industry is focusing on dielectrics with high relative dielectric constants (εr 10) to replace SiO2 gate oxides. Among the potential high- k materials, oxides and silicates of hafnium (Hf) have shown the most promise. The possibility of process cross-contamination by integrating these materials into silicon processes is a major concern for integrated circuit manufacturers. Cross-contamination of Hf in a plasma etch tool has been investigated. These studies confirm that significant cross-contamination occurs when HfO2 is etched in a chloro-fluoro-carbon plasma etch system. None of the standard cleaning processes commonly used in the semiconductor industry (such as SC1 and SC2) completely remove the contamination; however, dilute hydrofluoric acid, hydrofluoric acid-hydrogen peroxide water mixture, and SC1 cleans removed contamination below the concentration thresholds for oxide degradation and close to the total reflection X-ray fluorescence detection limit.

Original languageEnglish (US)
Article number017611JES
JournalJournal of the Electrochemical Society
Volume153
Issue number11
DOIs
StatePublished - 2006

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cleaning
Cleaning
contamination
Contamination
Plasmas
Hafnium
Oxides
Hydrofluoric Acid
Hydrofluoric acid
hafnium
hydrofluoric acid
oxides
industries
Semiconductor materials
Silicates
MOSFET devices
Silicon
hydrogen peroxide
Hydrogen peroxide
metal oxide semiconductors

ASJC Scopus subject areas

  • Electrochemistry
  • Surfaces, Coatings and Films
  • Surfaces and Interfaces

Cite this

Wet cleaning of cross-contamination of high-k dielectrics in plasma etch tool. / Pandit, Viraj; Parks, H. G.; Vermeire, Bert; Raghavan, Srini.

In: Journal of the Electrochemical Society, Vol. 153, No. 11, 017611JES, 2006.

Research output: Contribution to journalArticle

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