Wet etching of heat treated atomic layer chemical vapor deposited zirconium oxide in HF based solutions

Sriram Balasubramanian, Srini Raghavan

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

Alternative materials are being considered to replace silicon dioxide as gate dielectric material. Of these, the oxides of hafnium and zirconium show the most promise. However, integrating these new high-k materials into the existing complementary metal-oxide-semiconductor (CMOS) process remains a challenge. One particular area of concern is the wet etching of heat treated high-k dielectrics. In this paper, work done on the wet etching of heat treated atomic layer chemical vapor deposited (ALCVD) zirconium oxide in HF based solutions is presented. It was found that heat treated material, while refractory to wet etching at room temperature, is more amenable to etching at higher temperatures when methane sulfonic acid is added to dilute HF solutions. Selectivity over SiO2 is still a concern.

Original languageEnglish (US)
Pages (from-to)4502-4504
Number of pages3
JournalJapanese Journal of Applied Physics
Volume47
Issue number6 PART 1
DOIs
StatePublished - Jun 13 2008

Fingerprint

Wet etching
zirconium oxides
Zirconia
Vapors
etching
vapors
heat
Hafnium
Gate dielectrics
Zirconium
refractory materials
Refractory materials
hafnium
Etching
sulfonic acid
Methane
Silica
CMOS
Temperature
Oxides

Keywords

  • Heat treated dielectrics
  • HF
  • Methane sulfonic acid
  • Wet etching
  • Zirconium oxide

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

Wet etching of heat treated atomic layer chemical vapor deposited zirconium oxide in HF based solutions. / Balasubramanian, Sriram; Raghavan, Srini.

In: Japanese Journal of Applied Physics, Vol. 47, No. 6 PART 1, 13.06.2008, p. 4502-4504.

Research output: Contribution to journalArticle

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