Widely tunable high-power semiconductor disk laser with nonresonant AR-assisted gain element on diamond heat spreader

C. Borgentun, C. Hessenius, J. Bengtsson, M. Fallahi, A. Larsson

Research output: Contribution to journalArticle

4 Scopus citations

Abstract

We report on an optically pumped semiconductor disk laser with a wide wavelength tuning range and a high peak output power. This was achieved using a combination of efficient thermal management and a broadband gain element (GE) with carefully engineered spectral gain characteristics. For heat removal, a flip-chip bonding scheme on diamond was used. To provide high active mirror reflectance over a large wavelength region, the layered structure of the GE formed a nonresonant subcavity assisted by an antireflective structure. A peak output power of more than 7.5 W and a tuning range of 32 nm around the center wavelength of 995 nm were obtained.

Original languageEnglish (US)
Article number6030901
Pages (from-to)946-953
Number of pages8
JournalIEEE Photonics Journal
Volume3
Issue number5
DOIs
StatePublished - Oct 31 2011

Keywords

  • Tunable lasers
  • multilayer interference coatings
  • semiconductor lasers

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

Fingerprint Dive into the research topics of 'Widely tunable high-power semiconductor disk laser with nonresonant AR-assisted gain element on diamond heat spreader'. Together they form a unique fingerprint.

Cite this